Towards dark current suppression in metallic photocathodes by selected-area oxidation
C. Benjamin,
S.D. Seddon,
M. Walker,
L.B. Jones,
T.C.Q. Noakes,
G.R. Bell
Affiliations
C. Benjamin
Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom; ASTeC, STFC Daresbuy Laboratory, Daresbury, WA4 4AD, United Kingdom
S.D. Seddon
Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom; Institute of Applied Physics, Technische Universität Dresden, Dresden, 01069, Germany
M. Walker
Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
L.B. Jones
ASTeC, STFC Daresbuy Laboratory, Daresbury, WA4 4AD, United Kingdom; Cockcroft Institute, STFC Daresbuy Laboratory, Daresbury, WA4 4AD, United Kingdom
T.C.Q. Noakes
ASTeC, STFC Daresbuy Laboratory, Daresbury, WA4 4AD, United Kingdom; Cockcroft Institute, STFC Daresbuy Laboratory, Daresbury, WA4 4AD, United Kingdom
G.R. Bell
Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom; Corresponding author.
Oxide-free surfaces of polycrystalline Cu are prepared using acetic acid etching after chemical-mechanical polishing. UV ozone treatment is shown to increase the work function of the cleaned Cu by up to 0.5 eV. There is also a large reduction in quantum efficiency at 265 nm. Cu sheet can be easily masked from ozone exposure by Si or glass, meaning that selected-area oxi-dation is possible. Oxygen plasma treatment has a similar effect to the UV ozone but is more difficult to mask. There is no increase in surface roughness after oxidation, meaning that the larger work function could significantly re-duce dark current in accelerator photocathodes without affecting the desired photoemission region.