X-Ray Topography of the Subsurface Crystal Layers in the Skew Asymmetric Reflection Geometry

Abstract

The technique of X ray topography with the asymmetric reflection geometry of X-ray diffraction presented in this paper as useful tool for structural characterization of materials, particularly, epitaxial thin films and semiconductor multi-layered crystal systems used for the optoelectronic devices. New possibilities of this technique for a layer-by-layer visualization of structural changes in the subsurface crystal layers are demonstrated for semiconductors after various types of surface treatment, such as chemical etching, laser irradiation and ion implantation.