n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction
Ling Li,
Yuantao Zhang,
Long Yan,
Junyan Jiang,
Xu Han,
Gaoqiang Deng,
Chen Chi,
Junfeng Song
Affiliations
Ling Li
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Yuantao Zhang
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Long Yan
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Junyan Jiang
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Xu Han
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Gaoqiang Deng
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Chen Chi
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
Junfeng Song
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ∼396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ∼1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ∼3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.
