Fabrication of horizontal silicon nanowire arrays on insulator by ion irradiation
Xin Ou,
Reinhard Kögler,
Xing Wei,
Arndt Mücklich,
Xi Wang,
Wolfgang Skorupa,
Stefan Facsko
Affiliations
Xin Ou
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) e.V., P.O. Box 510119, 01314 Dresden, Germany
Reinhard Kögler
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) e.V., P.O. Box 510119, 01314 Dresden, Germany
Xing Wei
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Arndt Mücklich
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) e.V., P.O. Box 510119, 01314 Dresden, Germany
Xi Wang
State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Wolfgang Skorupa
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) e.V., P.O. Box 510119, 01314 Dresden, Germany
Stefan Facsko
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR) e.V., P.O. Box 510119, 01314 Dresden, Germany
We report a simple and potentially mass productive technique to fabricate horizontal single crystalline Si nanowire arrays on insulating substrate based on a self-organized pattern formation mechanism during Xe+ ion beam irradiation of Si-on-insulator material. A periodic ripple surface pattern is created by ion irradiation at 67o incidence angle to the surface normal. The transfer of this pattern to the oxide interface results in an array of electrically disconnected parallel ordered Si nanowires on the insulating oxide. Doping of the nanowires was demonstrated by boron ion implantation and annealing. The morphology and resistivity of the narrow nanowires with large aspect ratio were analysed by cross sectional transmission electron microscopy and scanning spreading resistance microscopy, respectively. Physical reasons of the observed low carrier activation are discussed.
