Extended diagnostics of semiconductor UV detectors

Abstract

The article presents selected issues of UV detectors’ diagnostics. When choosing the UV detector to a specific application, one should take into account that their optical and electrical parameters can vary significantly during operation. The most common sources of these processes are long term exposure of semiconductor structure of UV detector to the impact of thermal and/or optical radiation. On the basis of experimental studies of different types of semiconductor UV detectors, the methodology of their characterization has been developed. The first step is to measure spectral characteristics of the noise detector at ambient temperature. Measurements are aimed at checking and possible rejection of detectors that do not meet the requirements of the application. The next step is to measure spectral characteristics in a wide temperature range of positive and cryogenic temperatures’ changes. Detectors that are expected to be used in equipment operated in extreme conditions (eg. high temperature, high levels of natural ultraviolet), should be examined in the context of long-time diagnostics. These tests include annealing at elevated temperatures and long-term study of the effects of optical excitation. The developed diagnostic procedures allow us to obtain additional data, beyond the catalogue data, in terms of UV detectors operating in extreme conditions. On the other hand, studies on long term forecast ensure long-term reliability of detectors. Keywords: optoelectronic, semiconductors UV detectors, spectral characteristics

Keywords

• optoelectronic
• semiconductors UV detectors
• spectral characteristics