Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag<sub>2</sub>O/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction
Taejun Park,
Sangbin Park,
Joon Hui Park,
Ji Young Min,
Yusup Jung,
Sinsu Kyoung,
Tai Young Kang,
Kyunghwan Kim,
You Seung Rim,
Jeongsoo Hong
Affiliations
Taejun Park
Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Korea
Sangbin Park
Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Korea
Joon Hui Park
Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
Ji Young Min
Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
Yusup Jung
PowerCubeSemi, Inc., 686, Cheonggyesan-ro, Sujeong-gu, Seongnam-si 13105, Korea
Sinsu Kyoung
PowerCubeSemi, Inc., 686, Cheonggyesan-ro, Sujeong-gu, Seongnam-si 13105, Korea
Tai Young Kang
PowerCubeSemi, Inc., 686, Cheonggyesan-ro, Sujeong-gu, Seongnam-si 13105, Korea
Kyunghwan Kim
Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Korea
You Seung Rim
Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea
Jeongsoo Hong
Department of Electrical Engineering, College of IT Convergence, Gachon University, 1342, Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Korea
In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/β-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type β-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 °C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 °C, the as-fabricated device had a low leakage current of 4.24 × 10−11 A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 μW/cm2 light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 × 1011 Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/β-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.
