Gas Sensing Properties of Indium–Oxide–Based Field–Effect Transistor: A Review
Chengyao Liang,
Zhongyu Cao,
Jiongyue Hao,
Shili Zhao,
Yuanting Yu,
Yingchun Dong,
Hangyu Liu,
Chun Huang,
Chao Gao,
Yong Zhou,
Yong He
Affiliations
Chengyao Liang
State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China
Zhongyu Cao
Department of Ultrasound, The Affiliated Hospital of Southwest Jiaotong University, The Third People′s Hospital of Chengdu, Chengdu 600031, China
Jiongyue Hao
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Shili Zhao
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Yuanting Yu
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Yingchun Dong
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Hangyu Liu
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Chun Huang
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Chao Gao
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Yong Zhou
Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Yong He
State Key Laboratory of Coal Mine Disaster Dynamic and Control, Chongqing University, Chongqing 400044, China
Excellent stability, low cost, high response, and sensitivity of indium oxide (In2O3), a metal oxide semiconductor, have been verified in the field of gas sensing. Conventional In2O3 gas sensors employ simple and easy–to–manufacture resistive components as transducers. However, the swift advancement of the Internet of Things has raised higher requirements for gas sensors based on metal oxides, primarily including lowering operating temperatures, improving selectivity, and realizing integrability. In response to these three main concerns, field–effect transistor (FET) gas sensors have garnered growing interest over the past decade. When compared with other metal oxide semiconductors, In2O3 exhibits greater carrier concentration and mobility. The property is advantageous for manufacturing FETs with exceptional electrical performance, provided that the off–state current is controlled at a sufficiently low level. This review presents the significant progress made in In2O3 FET gas sensors during the last ten years, covering typical device designs, gas sensing performance indicators, optimization techniques, and strategies for the future development based on In2O3 FET gas sensors.
