Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology
Yujian Zhang,
Guojian Ding,
Fangzhou Wang,
Ping Yu,
Qi Feng,
Cheng Yu,
Junxian He,
Xiaohui Wang,
Wenjun Xu,
Miao He,
Yang Wang,
Wanjun Chen,
Haiqiang Jia,
Hong Chen
Affiliations
Yujian Zhang
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Guojian Ding
Songshan Lake Materials Laboratory, Dongguan 523808, China
Fangzhou Wang
Songshan Lake Materials Laboratory, Dongguan 523808, China
Ping Yu
Songshan Lake Materials Laboratory, Dongguan 523808, China
Qi Feng
Songshan Lake Materials Laboratory, Dongguan 523808, China
Cheng Yu
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Junxian He
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Xiaohui Wang
Songshan Lake Materials Laboratory, Dongguan 523808, China
Wenjun Xu
Songshan Lake Materials Laboratory, Dongguan 523808, China
Miao He
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Yang Wang
Songshan Lake Materials Laboratory, Dongguan 523808, China
Wanjun Chen
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Haiqiang Jia
Songshan Lake Materials Laboratory, Dongguan 523808, China
Hong Chen
Songshan Lake Materials Laboratory, Dongguan 523808, China
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection. The air-bridge source-connection was formed using the Direct Laser Writing Grayscale Photolithography, and it directly connected the two adjacent sources and spanned the gate and drain of the multi-finger p-GaN gate device, which featured the advantages of stable self-support and large-span capabilities. Verified by the experiments, the fabricated air-bridge p-GaN gate devices utilizing the Direct Laser Writing Grayscale Photolithography presented an on-resistance of 36 Ω∙mm, a threshold voltage of 1.8 V, a maximum drain current of 240 mA/mm, and a breakdown voltage of 715 V. The results provide beneficial design guidance for realizing large gate-width p-GaN gate high-electron-mobility transistor devices.
