Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
S. Zhao,
S. Y. Woo,
S. M. Sadaf,
Y. Wu,
A. Pofelski,
D. A. Laleyan,
R. T. Rashid,
Y. Wang,
G. A. Botton,
Z. Mi
Affiliations
S. Zhao
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
S. Y. Woo
Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada
S. M. Sadaf
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Y. Wu
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
A. Pofelski
Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada
D. A. Laleyan
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
R. T. Rashid
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Y. Wang
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
G. A. Botton
Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada
Z. Mi
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated.
