Communications Physics (Sep 2023)

Enhancement of spintronic terahertz emission enabled by increasing Hall angle and interfacial skew scattering

  • Yangkai Wang,
  • Weiwei Li,
  • Hao Cheng,
  • Zheng Liu,
  • Zhangzhang Cui,
  • Jun Huang,
  • Bing Xiong,
  • Jiwen Yang,
  • Haoliang Huang,
  • Jianlin Wang,
  • Zhengping Fu,
  • Qiuping Huang,
  • Yalin Lu

DOI
https://doi.org/10.1038/s42005-023-01402-x
Journal volume & issue
Vol. 6, no. 1
pp. 1 – 10

Abstract

Read online

Abstract Spintronic terahertz (THz) emitters (STEs) based on magnetic heterostructures have emerged as promising THz sources. However, it is still a challenge to achieve a higher intensity STE to satisfy all kinds of practical applications. Herein, we report a STE based on Pt0.93(MgO)0.07/CoFeB nanofilm by introducing dispersed MgO impurities into Pt, which reaches a 200% intensity compared to Pt/CoFeB and approaches the signal of 500 μm ZnTe crystal under the same pump power. We obtain a smaller spin diffusion length of Pt0.93(MgO)0.07 and an increased thickness-dependent spin Hall angle relative to the undoped Pt. We also find that the thickness of a Pt layer leads to a drastic change in the interface role in the spintronic THz emission, suggesting that the underlying mechanism of THz emission enhancement is a combined effect of enhanced bulk spin hall angle and the interfacial skew scattering by MgO impurities. Our findings demonstrate a simple way to realize high-efficiency, stable, advanced spintronic THz devices.