Recovery response of optical stopping effect on P2As20S78 and Sn1As20S79 film waveguide

Abstract

The recovery response characteristics of optical stopping effect on the low-impurity As20S80 system (P2As20S78 and Sn1As20S79) film waveguides are investigated in detail. Compared with As20S80, P2As20S78 film waveguide deteriorates the response behavior of recovery propagation and is mainly characterized by the slow recovery propagation process with the disappearance of the fast rising edge. On the contrary, Sn1As20S79 can improve evidently the earlier recovery stage by shortening response time of the rising edge to the milliseconds level, and also reduce the optical propagation loss. Experiments also show that the optical stopping effect can reach a saturated degree under He-Cd laser illumination for no less than 800 ms, and the addition of an assistant He-Ne laser may improve the recovery response slightly but not significantly.