We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline elements began to form as the film thicknesses increased to more than approximately 90 nm. We confirmed the coexistence of these two crystalline forms using x-ray diffraction and Raman spectroscopy, and we attribute the thickness-dependent structural change to internal stress induced by lattice mismatch with the substrate and to natural lattice relaxation at the growth conditions.
