Large-Signal RF Modeling with the EKV3 MOSFET Model

Abstract

This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used.

Keywords

• compact model
• EKV3 model
• large-signal
• loadpull
• MOSFET model
• radio frequency