Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

Zujun Wang; Wuying Ma; Shaoyan Huang; Zhibin Yao; Minbo Liu; Baoping He; Jing Liu; Jiangkun Sheng; Yuan Xue

doi:10.1063/1.4943674

AIP Advances (Mar 2016)

Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

Zujun Wang,
Wuying Ma,
Shaoyan Huang,
Zhibin Yao,
Minbo Liu,
Baoping He,
Jing Liu,
Jiangkun Sheng,
Yuan Xue

Affiliations

Zujun Wang: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Wuying Ma: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Shaoyan Huang: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Zhibin Yao: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Minbo Liu: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Baoping He: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Jing Liu: School of Materials Science and Engineering, Xiangtan University, Hunan, China
Jiangkun Sheng: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China
Yuan Xue: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024, China

DOI: https://doi.org/10.1063/1.4943674
Journal volume & issue: Vol. 6, no. 3
pp. 035205 – 035205-10

Abstract

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The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a 60Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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