Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3
Sushrut Modak,
Leonid Chernyak,
Alfons Schulte,
Corinne Sartel,
Vincent Sallet,
Yves Dumont,
Ekaterine Chikoidze,
Xinyi Xia,
Fan Ren,
Stephen J. Pearton,
Arie Ruzin,
Denis M. Zhigunov,
Sergey S. Kosolobov,
Vladimir P. Drachev
Affiliations
Sushrut Modak
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Leonid Chernyak
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Alfons Schulte
Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
Corinne Sartel
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Vincent Sallet
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Yves Dumont
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Ekaterine Chikoidze
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Xinyi Xia
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Fan Ren
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA
Stephen J. Pearton
Material Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
Arie Ruzin
School of Electrical Engineering, Tel Aviv University, Tel Aviv 69978, Israel
Denis M. Zhigunov
Center for Engineering Physics, Skolkovo Institute Science and Technology, Nobel St., Bldg. 1, Moscow 121205, Russia
Sergey S. Kosolobov
Center for Engineering Physics, Skolkovo Institute Science and Technology, Nobel St., Bldg. 1, Moscow 121205, Russia
Vladimir P. Drachev
Center for Engineering Physics, Skolkovo Institute Science and Technology, Nobel St., Bldg. 1, Moscow 121205, Russia
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.
