Advances in Radio Science (Nov 2010)

Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)

  • M. Weis,
  • D. Schmitt-Landsiedel

DOI
https://doi.org/10.5194/ars-8-275-2010
Journal volume & issue
Vol. 8
pp. 275 – 278

Abstract

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The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.