Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

Abstract

Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit design more difficult. Therefore, the modeling of RTS noise in SPAD devices is of great significance for the design of signal processing circuits. However, RTS noise is not included in the traditional equivalent circuit model. In response to the above problems, this paper implements an equivalent circuit model with RTS noise based on the Cadence. The model is built based on the basic components in the library, and it has strong application universality. The model is validated in a novel embedded photogate SPAD device (EP-SPAD). It accurately simulates the RTS noise and IV characteristics of the EP-SPAD device. In addition, the threshold voltage of EP-SPAD device operating in Geiger mode is precisely defined based on the characteristics of RTS noise. When the reverse bias voltage is increased from 0 V to 15 V, the IV characteristics of the model are consistent with the EP-SPAD device.

Keywords

• Silicon nanophotonics
• photodetectors
• sensors