Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

Dongdong D. Meng; Dongdong D. Meng; Xueqiang Q. Ji; Xueqiang Q. Ji; Dafang F. Wang; Zhengwei W. Chen; Zhengwei W. Chen

doi:10.3389/fmats.2021.672128

Frontiers in Materials (Jun 2021)

Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

Dongdong D. Meng,
Dongdong D. Meng,
Xueqiang Q. Ji,
Xueqiang Q. Ji,
Dafang F. Wang,
Zhengwei W. Chen,
Zhengwei W. Chen

Affiliations

Dongdong D. Meng: Department of Physics, College of Arts and Science, Qingdao Binhai University, Qingdao, China
Dongdong D. Meng: Key Laboratory of New Metallic Functional Materials and Advanced Surface Engineering in Universities of Shandong, Qingdao Binhai University, Qingdao, China
Xueqiang Q. Ji: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, China
Xueqiang Q. Ji: State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China
Dafang F. Wang: Department of Physics, College of Arts and Science, Qingdao Binhai University, Qingdao, China
Zhengwei W. Chen: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, China
Zhengwei W. Chen: State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

DOI: https://doi.org/10.3389/fmats.2021.672128
Journal volume & issue: Vol. 8

Abstract

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Monoclinic Ga2O3 (β-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by VGS. The current generated under dark conditions could also be regulated by VGS and tended to constant when the regulation of VGS was reaching saturation. Meanwhile, VGS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.

Published in Frontiers in Materials

ISSN: 2296-8016 (Online)
Publisher: Frontiers Media S.A.
Country of publisher: Switzerland
LCC subjects: Technology
Website: https://www.frontiersin.org/journals/materials

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