Minority Carrier Trap in <i>n</i>-Type 4H–SiC Schottky Barrier Diodes
Ivana Capan,
Yuichi Yamazaki,
Yuya Oki,
Tomislav Brodar,
Takahiro Makino,
Takeshi Ohshima
Affiliations
Ivana Capan
Ruđer Bošković Institute, Bijenička 54, 10 000 Zagreb, Croatia
Yuichi Yamazaki
Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370–1292, Japan
Yuya Oki
Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370–1292, Japan
Tomislav Brodar
Ruđer Bošković Institute, Bijenička 54, 10 000 Zagreb, Croatia
Takahiro Makino
Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370–1292, Japan
Takeshi Ohshima
Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370–1292, Japan
We present preliminary results on minority carrier traps in as-grown n-type 4H−SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects.
