Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation
J. W. Chen,
Y. D. Li,
M. Heini,
B. K. Liu,
Q. Q. Lei,
Q. Guo,
L. Wen,
D. Zhou,
W. Lu,
C. F. He,
A. Aierke
Affiliations
J. W. Chen
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Y. D. Li
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
M. Heini
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
B. K. Liu
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Q. Q. Lei
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
Q. Guo
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
L. Wen
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
D. Zhou
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
W. Lu
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
C. F. He
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
A. Aierke
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
The effects of displacement damage due to 1 MeV electron radiation on 680 nm and 850 nm vertical-cavity surface-emitting lasers (VCSELs) were experimentally investigated. The displacement damage dose was calculated using the MULASSIS tool, where it was found that radiation significantly affects the threshold current of VCSELs. The threshold current damage factor is 2.46 × 10−18 cm2/e for 680 nm VCSELs and 1.48 × 10−18 cm2/e for 850 nm VCSELs. In addition, the power intensity distribution and light output power degradation were characterized to evaluate the radiation hardness of VCSELs. An understanding of the performance degradation of VCSELs under electron exposure would be useful in optimizing their applications in hostile environments.
