Nature Communications (Mar 2021)
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
- Xiankun Zhang,
- Baishan Liu,
- Li Gao,
- Huihui Yu,
- Xiaozhi Liu,
- Junli Du,
- Jiankun Xiao,
- Yihe Liu,
- Lin Gu,
- Qingliang Liao,
- Zhuo Kang,
- Zheng Zhang,
- Yue Zhang
Affiliations
- Xiankun Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Baishan Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Li Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Huihui Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Xiaozhi Liu
- Collaborative Innovation Center of Quantum Matter
- Junli Du
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Jiankun Xiao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Yihe Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Lin Gu
- Collaborative Innovation Center of Quantum Matter
- Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Zhuo Kang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing
- DOI
- https://doi.org/10.1038/s41467-021-21861-6
- Journal volume & issue
-
Vol. 12,
no. 1
pp. 1 – 10
Abstract
Here, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.
