A novel strategy of fabricated flexible ITO electrode by liquid metal ultra-thin oxide film

Abstract

Flexible transparent conductive films are gaining attention day by day over the last few years due to it is a key component of next generation flexible electronics and optoelectronic devices. Indium tin oxide (ITO) as one of the most widely used transparent conductive material is limited by the traditional deposition approach cannot be achieve ultra-thin, which results in its brittle nature. Herein, a novel strategy for fabricating highly transparent conductive films by liquid metal interface phase separation technique based on low-melting liquid metal of InxSn100-x alloy is reported, during the solid-to-liquid phase transition of alloy, the monolayer of surface oxide film segregated with the bulk phase and was printed on the flexible polyethylene-naphthalate (PEN) substrate under the van der Waals. This novel strategy can directly print the ultra-thin self-oxide with the structure of ITO on PEN substrate, with the resulting of transparency over 97.5% and resistivity as low as 0.21 kΩ cm, providing a new way of low-cost raw ITO material as well as the personalized preparation strategy. The desirable highly transparent conductive films are comparable to recently reported ITO film, together with advantages of pretty steady, make them attractive as various flexible transparent conductive electrodes, for example, an ultra-thin ITO film is developed for luminescent devices.

Keywords

• Dielectric property
• Ultra-thin self-oxide
• Transparent conductive film
• Liquid metal