Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS

  • Yu. V. Bogatyrev,
  • S. B. Lastovsky,
  • S. A. Soroka,
  • S. V. Shwedov,
  • D. A. Ogorodnikov

Journal volume & issue
Vol. 0, no. 3
pp. 75 – 80

Abstract

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The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.

Keywords