Characteristics Research of the Three Dimensional Hall Magnetic Field Sensor Based on Packaging Technology

Abstract

This paper presents a three dimensional (3D) magnetic field sensor composed of three Hall elements with similar characteristics. Through adopting complementary metal oxide semiconductor (CMOS) technology, the chips of Hall element were designed and fabricated on the p-type silicon substrate with high resistivity. Based on the wire bonding technology, the Hall sensors were packaged on printed circuit boards (PCBs), allocating on three faces of a synthetic resin cube (10 ´ 10 ´ 10 mm3) to form an orthogonally directional array. When the supply voltage is 5.0 V, the magnetic sensitivities in x axis, y axis and z axis are 137.7 mV/T, 137.2 mV/T and 136.7 mV/T at room temperature, respectively. The experimental results show that the packaging device can achieve the measurement to 3D magnetic field.

Keywords

• 3D Hall magnetic field sensor
• CMOS technology
• Packaging technology
• Error analysis.