Ta Doping Effect on Structural and Optical Properties of InTe Thin Films
Chunmin Liu,
Yafei Yuan,
Xintong Zhang,
Jing Su,
Xiaoxiao Song,
Hang Ling,
Yuanjie Liao,
Hao Zhang,
Yuxiang Zheng,
Jing Li
Affiliations
Chunmin Liu
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Yafei Yuan
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Xintong Zhang
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Jing Su
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Xiaoxiao Song
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Hang Ling
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Yuanjie Liao
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Hao Zhang
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Yuxiang Zheng
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
Jing Li
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China
The objective of this work was to study the influence of Ta doping on the structural, transmittance properties, linear absorption parameter, and nonlinear absorption properties of InTe thin films. The as-deposited samples with different Ta doping concentrations were prepared by a magnetron co-sputtering technique and then annealed in nitrogen atmosphere. Structural investigations by X-ray diffraction revealed the tetragonal structure of InTe samples and that the crystallinity decreases with increasing Ta doping concentration. Further structural analysis by Raman spectra also showed good agreement with X-ray diffraction results. The Ta doping concentration and sample thickness determined by energy-dispersive X-ray spectroscopy and scanning electron microscopy increased as Ta dopant increased. In addition, X-ray photoelectron spectroscopic was carried out to analyze the chemical states of the elements. UV–VIS–NIR transmittance spectra were applied to study the transmittance properties and calculate the linear absorption coefficient. Due to Burstein–Moss effect, the absorption edge moved to shorter wavelengths. Meanwhile, the values of band gap were found to increase from 1.71 ± 0.02 eV to 1.85 ± 0.01 eV with the increase of Ta doping concentration. By performing an open aperture Z-scan technique, we found that all Ta-doped InTe samples exhibited two-photon absorption behaviors. The nonlinear optical absorption parameters, such as modulation depth, two-photon absorption coefficient, and two-photon absorption cross-section, decrease with increasing Ta concentration, whereas the damage threshold increases from 176 ± 0.5 GW/cm2 to 242 ± 0.5 GW/cm2. These novel properties show the potential for applications in traditional optoelectronic devices and optical limiters.
