Growth and Characterization of All-Inorganic Halide Perovskite CsPbF₃ Single Crystals

Abstract

Lead-based halide perovskite semiconductors have demonstrated considerable potential in optoelectronic applications. However, the lack of high-quality crystals suitable for research has led to rare reports on CsPbF3 single crystals. Good quality CsPbF3 single crystals were successfully grown using the Bridgman method. The structure, luminescence, and electrical properties of crystals were investigated. At room temperature, the crystal structure was determined to be cubic perovskite, with a calculated bandgap of 3.68 eV. The measured emission spectrum showed one broad emission peak at approximately 400 nm. Three decay time constants were obtained from a sum of exponential functions fit to the fluorescence decay curve: 0.4 ns, 2.4 ns, and 15.0 ns for fast, middle, and slow decay times, respectively. The decay times excited by pulsed X-ray were measured to be 2.2 ns and 10.2 ns, indicating that CsPbF3 is an ultrafast scintillator. Furthermore, the electrical properties demonstrated that CsPbF3 exhibits high ion mobility, which is approximately 20 times that of electron mobility.

Keywords

• CsPbF₃
• Bridgman method
• semiconductor
• ultrafast scintillation
• ionic mobility