Membranes (Sep 2021)

Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor

  • Tsung-Kuei Kang,
  • Yu-Yu Lin,
  • Han-Wen Liu,
  • Che-Li Lin,
  • Po-Jui Chang,
  • Ming-Cheng Kao,
  • Hone-Zern Chen

DOI
https://doi.org/10.3390/membranes11100758
Journal volume & issue
Vol. 11, no. 10
p. 758

Abstract

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By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.

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