Chemical Engineering Journal Advances (Aug 2023)
Ion beam engineering of implanted ZnO thin films for solar cell and lighting applications
Abstract
Ion beam modification is a one-of-a-kind approach for engineering nanomaterials to change their chemical and physical properties. Ion beam engineering of metal oxide semiconductor nanoparticles has been performed to improve their optoelectronic properties considering their energy applications. Zinc Oxide (ZnO) is one of these developing wide band gap semiconductor materials with remarkable optoelectronic features that has piqued the scientific community's curiosity for a number of energy applications. Through the implantation of distinct ions at varied parameters, the low energy ion beam approach has been widely used to modify the structural, morphological, and optoelectronic features of ZnO thin film-based devices (i.e. dose, energy etc.). It offers a promising approach for controlling implantation-induced defects and associated emission in ZnO thin films. On the one hand, inert ion bombardment causes consistent surface patterning to form on ZnO, while on the other, it creates nucleation centers for the creation of nanostructures. Due to the significant radiation resistance of ZnO thin films, tuning of different properties can be studied with little to no irreparable damage to the crystal lattice. In this context, rare earth metal ion implantation in ZnO thin films represents an alternate option for study in the realm of luminescent-based applications, such as solar cells and lighting. This paper focuses on the utility of such ion implantation procedures in optoelectronic devices such as solid-state lighting and solar cells, using ZnO as a prototype material. A correlation amongst the ion implantation induced defects, conductivity and optical behaviour has also been highlighted for in-depth understanding of implantation related effects in ZnO thin film based optoelectronic devices for solar cells and lighting applications.
