Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

Abstract

In this paper, we have compared and analyzed experimental and theoretical research on A2B6 types semiconductor materials CdS and CdO. The XRD spectra of the samples were examined using an atomic force microscope and X-ray diffraction microscopy. During film deposition, the temperature of the crucible with a source (CdS) varied in the range Tsourse ≈ 800 ÷ 850°C, and the substrate temperature was maintained within the range Tp ≈ 250 ÷ 270°C. In this case, to ensure the reproducibility of the structures, a shutter was used, with the help of which the CdS deposition time was set, which ensured that the film thickness was the same from experiment to experiment.