Безопасность информационных технологий (Mar 2022)

Static and dynamic characteristics of the integrated assessment of the radiation resistance of LSI of the hardware means of information protection

  • Vyacheslav M. Barbashov,
  • Nikolai S. Trushkin,
  • Vitaliy G. Ivanenko

DOI
https://doi.org/10.26583/10.26583/bit.2022.1.02
Journal volume & issue
Vol. 29, no. 1
pp. 9 – 16

Abstract

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Currently, there is a tendency to use the hardware means of information protection in extreme operating conditions, in particular, in the presence of powerful radiation. In this regard, the problem of assessing the stability of the hardware means of information protection operation is being updated, which is determined by the radiation resistance of the large digital integrated circuits (LSI) that make up them. Methods for ensuring information security in the form of static and dynamic characteristics, which are based on the use of functional-logical modeling of large digital integrated circuits (LSI) under the influence of ionizing radiation, are considered. It is shown that in some cases, information security is characterized by deterministic and non-deterministic failures when exposed to ionizing radiation. Methods for predicting the information security of LSI under the influence of ionizing radiation are proposed, which are based on models of fuzzy digital and probabilistic reliability automata. In the first case, the behavior of complex devices is determined by the specific ratio of radiation-sensitive parameters of the elements, in the second case by the statistical spread of switching moments leading to changes in the logic of the same type of sample. Moreover, the nature of their changes during irradiation depends on many factors, including the type of radiation, its intensity and spectrum, the type of criterion parameter that characterizes the radiation resistance of the LSI, and the mode of operation of the microcircuits.Conducting such a comparison is a necessary step for an adequate assessment of the radiation resistance of the LSI, which allows us to develop a procedure for analyzing the resistance of digital devices.

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