Nature Communications (Nov 2021)

Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces

  • Mingzhi Chen,
  • Hongzheng Dong,
  • Mengfan Xue,
  • Chunsheng Yang,
  • Pin Wang,
  • Yanliang Yang,
  • Heng Zhu,
  • Congping Wu,
  • Yingfang Yao,
  • Wenjun Luo,
  • Zhigang Zou

DOI
https://doi.org/10.1038/s41467-021-26661-6
Journal volume & issue
Vol. 12, no. 1
pp. 1 – 8

Abstract

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Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results.