Study on photoelectricity properties of SiCN thin films prepared by magnetron sputtering

Abstract

SiCN thin film is one of the most attractive silicon-based materials due to its excellent electrical, mechanical and optical properties. In this study, SiCN thin films have been prepared by the radio frequency reactive magnetron sputtering method under different sputtering power, pressure, and substrate temperature. The microstructure, morphology, and the optical and field emission properties of SiCN thin films were performed. The results indicated that the high-quality SiCN thin films have been successfully prepared and it is proved that these properties can be tailored by the preparation conditions. A main near ultraviolet light emission line at around 370 nm in SiCN thin films makes it suitable for the development of optoelectronic devices. This study can provide novel guidance for the controlled preparation of high-quality SiCN thin films by magnetron sputtering.

Keywords

• SiCN thin Films
• Photoelectric properties
• Magnetron sputtering