Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> Lead-Free Thin Films for Energy Storage Applications through Nanodomain Design
Wenfeng Yue,
Tingting Jia,
Yanrong Chen,
Wenbin Dai,
Liang Yu,
Yali Cai,
Ting Li,
Lixia Liu,
Quansheng Guo,
Shuhui Yu
Affiliations
Wenfeng Yue
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Tingting Jia
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Yanrong Chen
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Wenbin Dai
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Liang Yu
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Yali Cai
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Ting Li
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Lixia Liu
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Quansheng Guo
School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
Shuhui Yu
Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
Dielectric capacitors have received increasing attention due to their high power density. The Bi-based Aurivillius phase compound Bi3.25La0.75Ti3O12 (BLT) is considered a potential material in the field of energy storage due to its excellent ferroelectric properties and good fatigue resistance, and temperature stability. In this paper, 0.4Bi0.5Na0.5TiO3-0.6Bi3.25La0.75Ti3O12 (0.4NBT4BNT-0.6BLT)-thin films were prepared on Pt/Ti/SiO2/Si substrates with the sol-gel method. The addition of BNT destroys the long-range ferroelectric order of BLT and forms nanodomains. By increasing the BNT content, the BLT is transformed from a ferroelectric state to a relaxed state, and its application in the field of energy storage is realized. The recoverable energy density is 42.41 J/cm3, and the recoverable energy storage density is relatively stable in the range of 25–200 °C with good thermal stability. The energy storage efficiency is 75.32% at ~2663 kV/cm. The leakage current density at 300 kV/cm is 1.06 × 10−9 A/cm2.
