Electron localization induced by intrinsic anion disorder in a transition metal oxynitride

Daichi Oka; Yasushi Hirose; Shoichiro Nakao; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.1038/s42005-021-00777-z

Communications Physics (Dec 2021)

Electron localization induced by intrinsic anion disorder in a transition metal oxynitride

Daichi Oka,
Yasushi Hirose,
Shoichiro Nakao,
Tomoteru Fukumura,
Tetsuya Hasegawa

Affiliations

Daichi Oka: Department of Chemistry, Graduate School of Science, Tohoku University
Yasushi Hirose: Department of Chemistry, School of Science, The University of Tokyo
Shoichiro Nakao: Department of Chemistry, School of Science, The University of Tokyo
Tomoteru Fukumura: Department of Chemistry, Graduate School of Science, Tohoku University
Tetsuya Hasegawa: Department of Chemistry, School of Science, The University of Tokyo

DOI: https://doi.org/10.1038/s42005-021-00777-z
Journal volume & issue: Vol. 4, no. 1
pp. 1 – 8

Abstract

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Anderson localisation is a well-known phenomenon in condensed-matter physics, which is driven by disorder and can be an important factor in the low-temperature properties for a wide range of systems. Here, the authors describe how a metal-insulator transition can be induced by anion disorder in the perovskite oxynitride SrNbO2N.

Published in Communications Physics

ISSN: 2399-3650 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science: Astronomy: Astrophysics; Science: Physics
Website: https://www.nature.com/commsphys/

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