Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics

Abstract

The thermoelectric power and Hall effect of Sn-or Ge-doped In2O3 ceramics are investigated based on a comparative study. The metal-type conductivity in both the samples occurs when the carrier concentration exceeds ~1019 cm-3. The carrier mobility is found to be higher for Ge-doped samples. The relation between the > of the dopant element and its scattering cross section is also presented.