Terahertz transient stimulated emission from doped silicon

S. G. Pavlov; N. Deßmann; A. Pohl; R. Kh. Zhukavin; T. O. Klaassen; N. V. Abrosimov; H. Riemann; B. Redlich; A. F. G. van der Meer; J.-M. Ortega; R. Prazeres; E. E. Orlova; A. V. Muraviev; V. N. Shastin; H.-W. Hübers

doi:10.1063/5.0020654

APL Photonics (Oct 2020)

Terahertz transient stimulated emission from doped silicon

S. G. Pavlov,
N. Deßmann,
A. Pohl,
R. Kh. Zhukavin,
T. O. Klaassen,
N. V. Abrosimov,
H. Riemann,
B. Redlich,
A. F. G. van der Meer,
J.-M. Ortega,
R. Prazeres,
E. E. Orlova,
A. V. Muraviev,
V. N. Shastin,
H.-W. Hübers

Affiliations

S. G. Pavlov: Institute of Optical Sensor Systems, German Aerospace Center (DLR), 12489 Berlin, Germany
N. Deßmann: FELIX Laboratory, Radboud University, 6525 ED Nijmegen, The Netherlands
A. Pohl: Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
R. Kh. Zhukavin: Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
T. O. Klaassen: Faculty of Applied Sciences, Delft University of Technology, 2628 CN Delft, The Netherlands
N. V. Abrosimov: Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
H. Riemann: Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
B. Redlich: FELIX Laboratory, Radboud University, 6525 ED Nijmegen, The Netherlands
A. F. G. van der Meer: FELIX Laboratory, Radboud University, 6525 ED Nijmegen, The Netherlands
J.-M. Ortega: CLIO/Université Paris-Saclay, CNRS, Institut de Chimie Physique, 91405 Orsay, France
R. Prazeres: CLIO/Université Paris-Saclay, CNRS, Institut de Chimie Physique, 91405 Orsay, France
E. E. Orlova: Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom
A. V. Muraviev: The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816, USA
V. N. Shastin: Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
H.-W. Hübers: Institute of Optical Sensor Systems, German Aerospace Center (DLR), 12489 Berlin, Germany

DOI: https://doi.org/10.1063/5.0020654
Journal volume & issue: Vol. 5, no. 10
pp. 106102 – 106102-8

Abstract

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Transient-type stimulated emission in the terahertz (THz) frequency range has been achieved from phosphorus doped silicon crystals under optical excitation by a few-picosecond-long pulses generated by the infrared free electron lasers FELIX and CLIO. The analysis of the lasing threshold and emission spectra indicates that the stimulated emission occurs due to combined population inversion based lasing and stimulated Raman scattering. Giant gain has been obtained in the optically pumped silicon due to large THz cross sections of intracenter impurity transitions and resonant intracenter electronic scattering. The transient-type emission is formed under conditions when the pump pulse intervals exceed significantly the photon lifetime in the laser resonator.

Published in APL Photonics

ISSN: 2378-0967 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
Website: https://aplphotonics.aip.org

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