Nature Communications (Apr 2019)
Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
Abstract
The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.