Nature Communications (Apr 2019)

Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

  • Dapan Li,
  • Changyong Lan,
  • Arumugam Manikandan,
  • SenPo Yip,
  • Ziyao Zhou,
  • Xiaoguang Liang,
  • Lei Shu,
  • Yu-Lun Chueh,
  • Ning Han,
  • Johnny C. Ho

DOI
https://doi.org/10.1038/s41467-019-09606-y
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 10

Abstract

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The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.