Fabrication of alcohol sensor using undoped and Al doped ZnO nanostructure film with polymer electrolyte gating

Abstract

We report the fabrication of two terminal and three terminal gas sensor using Al-doped ZnO nanostructured-films and polymer electrolyte gate dielectric on glass substrate using vacuum free chemical method. The Al doped ZnO films are characterized by UV–vis Spectrometer, SEM, EDX and XRD. The characterization results have revealed the polycrystalline structure of both undoped and doped ZnO; with loosely packed, porous, and spherical granny nanostructure with mean grain size 20–10 nm and bandgap of the films is within the range of 3.12–3.16 eV. The conductivity of the ZnO film is tuned by Al concentration and the maximum value of conductivity was observed in 3 % Al doped ZnO films. Similarly, the best performance index of TFT such as current ON/OFF ratio, high transconductance and low threshold voltage was observed in 3 % Al doping concentration. The ordinary (two-terminal) sensor and three-terminal (FET) sensors' responses towards three different concentrations 50, 250, 500 ppm of ethanol and methanol vapors have been studied. The sensitivity of the film is modulated by Al concentration and higher value of sensitivity was achieved at 3 % Al doped ZnO films. The use of polymer electrolyte enhanced the sensitivity of the device which is more effective in methanol vapor. The Response-Recovery time of the sensor is significantly improved in three terminal devices than the two terminal devices.

Keywords

• EDL gate dielectric
• Field effect transistor sensor
• Al doped ZnO
• Polymer electrolyte