The unique effect of in-plane anisotropic strain in the magnetization control by electric field
Y. Y. Zhao,
J. Wang,
F. X. Hu,
Y. Liu,
H. Kuang,
R. R. Wu,
J. R. Sun,
B. G. Shen
Affiliations
Y. Y. Zhao
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
J. Wang
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
F. X. Hu
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
Y. Liu
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
H. Kuang
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
R. R. Wu
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
J. R. Sun
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
B. G. Shen
Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
The electric field control of magnetization in both (100)- and (011)-Pr0.7Sr0.3MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PSMO/PMN-PT) heterostructures were investigated. It was found that the in-plane isotropic strain induced by electric field only slightly reduces the magnetization at low temperature in (100)-PSMO/PMN-PT film. On the other hand, for (011)-PSMO/PMN-PT film, the in-plane anisotropic strain results in in-plane anisotropic, nonvolatile change of magnetization at low-temperature. The magnetization, remanence and coercivity along in-plane [100] direction are suppressed by the electric field while the ones along [01-1] direction are enhanced, which is ascribed to the extra effective magnetic anisotropy induced by the electric field via anisotropic piezostrains. More interestingly, such anisotropic modulation behaviors are nonvolatile, demonstrating a memory effect.
