Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub> Thin Film Prepared via Magnetron Sputtering
Donglou Ren,
Xue Luo,
Shuo Chen,
Zhuanghao Zheng,
Michel Cathelinaud,
Guangxing Liang,
Hongli Ma,
Xvsheng Qiao,
Xianping Fan,
Xianghua Zhang
Affiliations
Donglou Ren
ISCR (Institut des Sciences Chimiques de Rennes)-CNRS, UMR 6226, Univ. Rennes, F-35000 Rennes, France
Xue Luo
ISCR (Institut des Sciences Chimiques de Rennes)-CNRS, UMR 6226, Univ. Rennes, F-35000 Rennes, France
Shuo Chen
Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Zhuanghao Zheng
Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Michel Cathelinaud
ISCR (Institut des Sciences Chimiques de Rennes)-CNRS, UMR 6226, Univ. Rennes, F-35000 Rennes, France
Guangxing Liang
Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Hongli Ma
ISCR (Institut des Sciences Chimiques de Rennes)-CNRS, UMR 6226, Univ. Rennes, F-35000 Rennes, France
Xvsheng Qiao
State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Xianping Fan
State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Xianghua Zhang
ISCR (Institut des Sciences Chimiques de Rennes)-CNRS, UMR 6226, Univ. Rennes, F-35000 Rennes, France
Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (Voc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped Sb2Se3 thin films were successfully prepared using a homemade target via magnetron sputtering. The Te atoms were expected to be inserted in the spacing of (Sb4Se6)n ribbons based on increased lattice parameters in this study. Moreover, the thin film was found to possess a narrow and direct band gap of approximately 1.27 eV, appropriate for harvesting the solar energy. It was found that the photoelectric performance is related to not only the quality of films but also the preferred growth orientation. The Te-Sb2Se3 film annealed at 325 °C showed a maximum photocurrent density of 1.91 mA/cm2 with a light intensity of 10.5 mW/cm2 at a bias of 1.4 V. The fast response and recovery speed confirms the great potential of these films as excellent photodetectors.
