Optimization of Pulsed Laser Energy Density for the Preparation of MoS<sub>2</sub> Film and Its Device by Pulsed Laser Deposition
Wei Cai,
Yuxiang Liu,
Rihui Yao,
Weijian Yuan,
Honglong Ning,
Yucheng Huang,
Shaojie Jin,
Xuecong Fang,
Ruhai Guo,
Junbiao Peng
Affiliations
Wei Cai
Ji Hua Laboratory, Foshan 528000, China
Yuxiang Liu
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Rihui Yao
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Weijian Yuan
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Honglong Ning
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Yucheng Huang
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Shaojie Jin
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Xuecong Fang
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
Ruhai Guo
GDJH Advanced Display Equipment Ltd., Foshan 528000, China
Junbiao Peng
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS2 films. We gradually increased the pulsed laser energy density from 70 mJ·cm−2 to 110 mJ·cm−2 and finally determined that 100 mJ·cm−2 was the best-pulsed laser energy density for MoS2 films by PLD. The surface morphology and crystallization of the MoS2 films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS2 phase with strong (002) preferential orientation, and their direct optical band gap (Eg) is 1.614 eV. At the same time, the Si/MoS2 heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.
