Experimental Demonstration of π Equivalent Phase-Shifted SBG Laser With Controlled Distributed Phase Shift

Abstract

We designed and fabricated a π equivalent phase-shifted sampled Bragg grating (SBG) semiconductor laser with a controlled distributed phase shift. The phase shift is equivalently realized with reconstruction-equivalent-chirp (REC) technique. The laser is divided into three sections with the same length. By injecting different currents into the side and middle sections, a distributed phase shift can be introduced. The lasing wavelength can be continuously tuned by the injection currents. In our experiment, when the total current keeps 130 mA, the lasing wavelength can be continuously tuned by 1.2 nm. During the tuning, the side mode suppression ratio keeps above 40 dB and the output power varies only 1.3 dB. Therefore, the proposed method provides an alternative solution for the multiwavelength laser arrays in dense wavelength-division multiplexing (DWDM) systems.

Keywords

• Semiconductor lasers
• tunable lasers
• fiber gratings.