IEEE Photonics Journal (Jan 2012)

Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well

  • Lifang Xu,
  • Dinesh Patel,
  • Carmen S. Menoni,
  • Jeng-Ya Yeh,
  • Luke J. Mawst,
  • Nelson Tansu

DOI
https://doi.org/10.1109/JPHOT.2012.2230251
Journal volume & issue
Vol. 4, no. 6
pp. 2262 – 2271

Abstract

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We report our experimental results and theoretical analysis on carrier escape time in In0.4Ga0.6As1 -yNy/GaAs (y = 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with N-contents of 0% and 0.5%. The experiments were carried out by using novel time-resolved two-color pump-probe transmission measurements. Our results show a significant decrease of carrier escape time with nitrogen incorporation in the InGaAsN QW, which agrees well with the values obtained from the theoretical calculation based on thermally activated hole leakage. The measurement results provide experimental supports for hole leakage theory.

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