Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes
Kuo-Yu Hsiang,
Chun-Yu Liao,
Jer-Fu Wang,
Zhao-Feng Lou,
Chen-Ying Lin,
Shih-Hung Chiang,
Chee-Wee Liu,
Tuo-Hung Hou,
Min-Hung Lee
Affiliations
Kuo-Yu Hsiang
Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Chun-Yu Liao
Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Jer-Fu Wang
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
Zhao-Feng Lou
Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Chen-Ying Lin
Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Shih-Hung Chiang
Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Chee-Wee Liu
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
Tuo-Hung Hou
Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
Min-Hung Lee
Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.
