Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes

Kuo-Yu Hsiang; Chun-Yu Liao; Jer-Fu Wang; Zhao-Feng Lou; Chen-Ying Lin; Shih-Hung Chiang; Chee-Wee Liu; Tuo-Hung Hou; Min-Hung Lee

doi:10.3390/nano11102685

Nanomaterials (Oct 2021)

Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes

Kuo-Yu Hsiang,
Chun-Yu Liao,
Jer-Fu Wang,
Zhao-Feng Lou,
Chen-Ying Lin,
Shih-Hung Chiang,
Chee-Wee Liu,
Tuo-Hung Hou,
Min-Hung Lee

Affiliations

Kuo-Yu Hsiang: Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Chun-Yu Liao: Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Jer-Fu Wang: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
Zhao-Feng Lou: Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Chen-Ying Lin: Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Shih-Hung Chiang: Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan
Chee-Wee Liu: Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
Tuo-Hung Hou: Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
Min-Hung Lee: Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan

DOI: https://doi.org/10.3390/nano11102685
Journal volume & issue: Vol. 11, no. 10
p. 2685

Abstract

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Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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