Growth of Fe-doped and V-doped MoS2 and their magnetic-electrical effects

Abstract

Magnetism in two-dimensional (2D) materials has attracted much attention recently. However, intrinsic magnetic 2D materials are rare and mostly unstable in ambient. Although heteroatom doping can introduce magnetism, the basic property especially the electrical-magnetic coupling property has been rarely revealed. Herein, both iron (Fe)-doped and vanadium (V)-doped MoS2 films were grown by chemical vapor deposition. Through studying the structure and electrical property of Fe-doped and V-doped MoS2, it was found that both Fe and V doping would decrease the electron concentration, exhibiting a p-type doping effect. Significantly, V-doped MoS2 displays a p-type conduction behavior. Although the carrier mobility decreases after heteroatom doping, both Fe and V doping could endow MoS2 with magnetism, in which the transfer curves of both MoS2 transistors exhibit a strong magnetic-dependent behavior. It is found that the magnetic response of Fe-doped MoS2 can be tuned from ~0.2 ​nA/T to ~1.3 ​nA/T, with the tunability much larger than that of V-doped MoS2. At last, the magnetic mechanism is discussed with the local magnetic property performed by magnetic force microscopy. The typical morphology-independent magnetic signal demonstrates the formed magnetic domain structure in Fe-doped MoS2. This study opens new potential to design novel magnetic-electrical devices.

Keywords

• Magnetic domain
• Magnetic doping
• MoS2
• p-type semiconductor