Design of S band power amplifier based on the GaN HEMT

Abstract

This paper uses internal matching technology and the cell structure of a single cell to design and implement a design of 3.8～4.2 GHz power amplifier. The amplifier is based on a GaN HEMT independently developed by Nanjing Electronic Device Institute. By optimizing the design, the amplifier achieves a peak output power of Pout greater than 30 W and the PAE of the amplifier greater than 48%, at a relative bandwidth of 10%, a drain-source voltage of 28 V, and a continuous wave operating condition,which fully shows the GaN power device′s broadband, high-efficiency, and high-power performance,so the device has broad prospects for engineering applications.

Keywords

• internal matching
• high efficiency
• power amplifier
• S band