Nature Communications (Apr 2019)
ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
- Lynn Lee,
- Jeongwoon Hwang,
- Jin Won Jung,
- Jongchan Kim,
- Ho-In Lee,
- Sunwoo Heo,
- Minho Yoon,
- Sungju Choi,
- Nguyen Van Long,
- Jinseon Park,
- Jae Won Jeong,
- Jiyoung Kim,
- Kyung Rok Kim,
- Dae Hwan Kim,
- Seongil Im,
- Byoung Hun Lee,
- Kyeongjae Cho,
- Myung Mo Sung
Affiliations
- Lynn Lee
- Department of Chemistry, Hanyang University
- Jeongwoon Hwang
- Department of Materials Science and Engineering, University of Texas at Dallas
- Jin Won Jung
- Department of Chemistry, Hanyang University
- Jongchan Kim
- Department of Chemistry, Hanyang University
- Ho-In Lee
- School of Material Science and Engineering, Gwangju Institute of Science and Technology
- Sunwoo Heo
- School of Material Science and Engineering, Gwangju Institute of Science and Technology
- Minho Yoon
- vdWMRC, Department of Physics, Yonsei University
- Sungju Choi
- C-ICT Research Center (ERC), School of Electrical Engineering, Kookmin University
- Nguyen Van Long
- Department of Chemistry, Hanyang University
- Jinseon Park
- Department of Chemistry, Hanyang University
- Jae Won Jeong
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology
- Jiyoung Kim
- Department of Materials Science and Engineering, University of Texas at Dallas
- Kyung Rok Kim
- School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology
- Dae Hwan Kim
- C-ICT Research Center (ERC), School of Electrical Engineering, Kookmin University
- Seongil Im
- vdWMRC, Department of Physics, Yonsei University
- Byoung Hun Lee
- School of Material Science and Engineering, Gwangju Institute of Science and Technology
- Kyeongjae Cho
- Department of Materials Science and Engineering, University of Texas at Dallas
- Myung Mo Sung
- Department of Chemistry, Hanyang University
- DOI
- https://doi.org/10.1038/s41467-019-09998-x
- Journal volume & issue
-
Vol. 10,
no. 1
pp. 1 – 9
Abstract
Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.
