Fabrication and DC-Bias Manipulation Frequency Characteristics of AlN-Based Piezoelectric Micromachined Ultrasonic Transducer

Abstract

Due to their excellent capabilities to generate and sense ultrasound signals in an efficient and well-controlled way at the microscale, piezoelectric micromechanical ultrasonic transducers (PMUTs) are being widely used in specific systems, such as medical imaging, biometric identification, and acoustic wireless communication systems. The ongoing demand for high-performance and adjustable PMUTs has inspired the idea of manipulating PMUTs by voltage. Here, PMUTs based on AlN thin films protected by a SiO2 layer of 200 nm were fabricated using a standard MEMS process with a resonant frequency of 505.94 kHz, a −6 dB bandwidth (BW) of 6.59 kHz, and an electromechanical coupling coefficient of 0.97%. A modification of 4.08 kHz for the resonant frequency and a bandwidth enlargement of 60.2% could be obtained when a DC bias voltage of −30 to 30 V was applied, corresponding to a maximum resonant frequency sensitivity of 83 Hz/V, which was attributed to the stress on the surface of the piezoelectric film induced by the external DC bias. These findings provide the possibility of receiving ultrasonic signals within a wider frequency range, which will play an important role in underwater three-dimensional imaging and nondestructive testing.

Keywords

• piezoelectric micromachined ultrasonic transducer (PMUT)
• aluminum nitride (AlN)
• microelectromechanical system (MEMS) fabrication
• DC bias
• frequency characteristics