Strain induced changes in magnetization of amorphous Co95Zr5 based multiferroic heterostructures

Abstract

A clear change in the magnetic anisotropy in a layer of amorphous Co95Zr5 is obtained at the orthorhombic phase transition of the BaTiO3 substrate. The use of an amorphous buffer layer between the ferroelectric substrate and amorphous magnetic film shows that bulk strain governs the change in the magnetic anisotropy of our ferromagnetic-ferroelectric heterostructure. Moreover, we show that the thermal magnetization curves exhibit anisotropic behavior.