Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition

Q. Qiao; L. P. Jin; Y. W. Li; M. J. Li; Z. G. Hu; J. H. Chu

doi:10.1063/1.4982728

AIP Advances (Apr 2017)

Influence of composition on structure, morphology and dielectric properties of BixAlyOz composite films synthesized by atomic layer deposition

Q. Qiao,
L. P. Jin,
Y. W. Li,
M. J. Li,
Z. G. Hu,
J. H. Chu

Affiliations

Q. Qiao: Key Laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China
L. P. Jin: Key Laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China
Y. W. Li: Key Laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China
M. J. Li: Key Laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China
Z. G. Hu: Key Laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China
J. H. Chu: Key Laboratory of Polar Materials and Devices, MOE, Department of Electronic Engineering, East China Normal University, Shanghai 200241, People’s Republic of China

DOI: https://doi.org/10.1063/1.4982728
Journal volume & issue: Vol. 7, no. 4
pp. 045120 – 045120-8

Abstract

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In this experiment we used atomic layer deposited Bi2O3 and Al2O3 films to fabricate the BixAlyOz nanocomposite films. Bismuth composition was modulated in a series of samples via altering the number of bismuth subsidiary cycles. We discovered that the bismuth composition in atomic percent did not monotonically increase with the rise of the number of bismuth cycles. To explain this unconventional variation trend we proposed a growth mechanism regarding the steric hindrance of Bi(thd)3 and the diffusion of TMA. A single Debye-like relaxation can be determined for the BixAlyOz films with a parallel RC element to reflect it. The change in the dielectric response, such as dielectric constant and ac conductivity, was found to be in agreement with the variation of bismuth concentration. This could be attributed to the effect of 6s2 lone pair electrons in Bi-O dipoles. To further confirm the conductive strength, we estimated the optical band gap (Eg) using plots of (αhν)2 versus hν. The value of Eg would decrease from 5.62 eV to 5.00 eV as the bismuth content rises in the BixAlyOz films.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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